| 年 | 題目 | 刊物名稱 | 卷 | 起始頁 |
|
2020
|
Optical characterizations of Cd1-xZnxTe mixed crystals grown by vertical Bridgman-Stockbarger method
|
JOURNAL OF CRYSTAL GROWTH
|
534
|
125491-1
|
|
2020
|
Optical characterization of lead iodide grown by chemical vapor transport method
|
JAPANESE JOURNAL OF APPLIED PHYSICS
|
59
|
SGGK12-1
|
|
2019
|
Optical characterization and photovoltaic performance evaluation of GaAs p-i-n solar cells with various metal grid spacings
|
CRYSTALS
|
9
|
170-1
|
|
2019
|
PbI2 Single Crystal Growth and Its Optical Property Study
|
CRYSTALS
|
9
|
589-1
|
|
2019
|
High optical response of niobium doped WSe2 layered crystals
|
Materials
|
12
|
1161-1
|
|
2018
|
Effect of Lithium Doping on Microstructural and Optical Properties of ZnO Nanocrystalline Films Prepared by the Sol-Gel Method
|
CRYSTALS
|
8
|
228-1
|
|
2018
|
Doping with Nb enhances the photoresponsivity of WSe2 thin sheets
|
AIP ADVANCES
|
8
|
055011-1
|
|
2018
|
Optical and electrical transport properties of ZnO/MoS2 heterojunction p-n structure
|
MATERIALS CHEMISTRY AND PHYSICS
|
220
|
433
|
|
2017
|
Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1-x)Se2x Alloys with Distorted 1T Structure
|
Small
|
113
|
1603788-1
|
|
2017
|
Fabrication and current-voltage characteristics of Mo-1 - xWxS2/graphene oxide heterojunction diode
|
SURFACE & COATINGS TECHNOLOGY
|
320
|
520
|
|
2017
|
Preferential S/Se occupation in an anisotropic ReS2(1-x)Se2x monolayer alloy
|
Nanoscale
|
9
|
18275
|
|
2016
|
Two dimensional MoS2/graphene p-n heterojunction diode: Fabrication and electronic characteristics
|
Journal of Alloys and Compounds
|
671
|
276
|
|
2016
|
Temperature-dependent photoluminescence emission and Raman scattering from Mo1-xWxS2 monolayers
|
Nanotechnology
|
27
|
445705-1
|
|
2016
|
Optical anisotropy of tungsten-doped ReS2 layered crystals
|
Optical Materials
|
62
|
433
|
|
2015
|
Optical characterization of Zn0.48Cd0.52Se/Zn0.24Cd0.18Mg0.58Se asymmetric coupled quantum well structure
|
Chinese Journal of Physics
|
53
|
020801-1
|
|
2015
|
Study of GaAsSb/GaAs type-II quantum well with top InAs quantum dot layer using complementary spectroscopy techniques
|
Japanese Journal of Applied Physics
|
54
|
091201-1
|
|
2015
|
Temperature dependent piezoreflectance study of Mo1-xWxSe2 layered crystals
|
Journal of Applied Physics
|
118
|
215704-1
|
|
2014
|
Temperature dependence study of near-band-edge transitions of compressively strained quaternary GaAsPSb layer by photoreflectance and piezoreflectance spectroscopy
|
Japanese Journal of Applied Physics
|
53
|
051201-1
|
|
2014
|
Piezoreflectance study of near band edge excitonic-transitions of mixed-layered crystal Mo(SxSe1-x)2 solid solutions
|
Journal of Applied Physics
|
115
|
223508-1
|
|
2014
|
The study of temperature dependent strain in Ge epilayer with SiGe/Ge buffer layer on Si substrate with different thickness
|
Applied Physics Letters
|
104
|
241605-1
|
|
2014
|
Composition dependent lattice dynamics in MoSxSe(2-x) alloys
|
Journal of Applied Physics
|
116
|
193505-1
|
|
2013
|
Temperature dependent surface photovoltage spectra of type I GaAs1-xSbx/GaAs multiple quantum well structures
|
Journal of Applied Physics
|
113
|
073702-1
|
|
2013
|
Characterization of Ge/Si0.16Ge0.84 multiple quantum wells on Ge-on-Si virtual substrate using piezoreflectance spectroscopy
|
Solid State Communications
|
167
|
5
|
|
2013
|
Characterization of the structural and optical properties of CuIn1−xGaxSe2 thin films by X-ray diffraction
|
Journal of Luminescence
|
142
|
81
|
|
2013
|
Photoconductivities in monocrystalline layered V2O5 nanowires grown by physical vapor deposition
|
Nanoscale Research Letters
|
8
|
443-1
|
|
2013
|
Contactless electroreflectance and photoluminescence study of the Sb surfactant effects on InGaAsN multiple quantum wells
|
Chinese Journal of Physics
|
51
|
1067
|
|
2013
|
Photoreflectance spectroscopy characterization of Ge/Si0.16Ge0.84 multiple quantum wells on germanium virtual substrate
|
Advances in Condensed Matter Physics
|
2013
|
298190-1
|